Associate Professor Srabanti Chowdhury will give a talk on  “Widebandgap semiconductors for high power and high frequency electronics”. All are welcomed to join. Please register here (contact form) if you wish to attend the lecture.

Speaker : Assoc. Prof. Srabanti Chowdhury (Stanford University)

Abstract

Widebandgap semiconductors for high power and high frequency electronics

We live in a very exciting time, often identified as the age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. Smart devices, including appliances, equipment, and machinery, supported by the IoT, are becoming more intelligent and affordable. Robotics and autonomous vehicles promise to transform our lifestyles.  Among all these new waves of technology, the idea of achieving a carbon-free energy system by 2050 is now more than a commitment and requires energy efficient electronics at every level.
Wide-bandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities, complementing Si. Semiconductor devices with higher power density have unprecedented value in both power and high frequency electronics. Reducing energy losses is not only critical for minimizing consumption of limited resources, but it also simultaneously enables compact and light weight solutions — the basis for a new industry offering increased performance at reduced system cost.
The success of gallium nitride has opened the door to other ultra-wide bandgap materials (e.g., Diamond, Aluminum Nitride and Gallium Oxide), presenting new area of research covering a wide spectrum from materials, physics, devices, and applications. In this talk I will focus on our research on Wide bandgap materials and devices and walk you through some of our recent findings. I will focus on GaN and diamond research, citing some of our fundamental work in electrical transport, as well as thermal.

Biography

Srabanti Chowdhury is the Willard and Inez Kerr Bell Faculty Scholar associate professor of Electrical Engineering (EE) at Stanford. Her research focuses on wideband gap (WBG) and ultra-wide bandgap (UWBG) materials and device engineering for energy efficient and compact system architecture for power electronics, and RF applications. Besides Gallium Nitride, her group is exploring Diamond for various active, and passive electronic applications, particularly thermal management. She received her M.S and PhD in Electrical Engineering from University of California, Santa Barbara. 

She received several early career awards including DARPA Young Faculty Award, NSF CAREER and AFOSR Young Investigator Program (YIP) in 2015. In 2016 she received the Young Scientist award at the International Symposium on Compound Semiconductors (ISCS). She is a senior member of IEEE and alumni of NAE Frontiers of Engineering.  

She received the Alfred P. Sloan fellowship in Physics in 2020.  To date, her work has produced over 6 book chapters, 100 journal papers, 110 conference presentations, and 26 issued patents.  She serves the program committee of several IEEE conferences including IRPS and VLSI Symposium, and the executive committee of IEDM.